My Research in Silicon Nanostructures for Light Emission

My research has been dedicated to unlocking the potential of silicon (Si) at the nanoscale to develop efficient light-emitting materials, a critical step toward integrating optics directly into silicon-based electronics. A central theme throughout my work has been the investigation of quantum confinement effects in both ultrathin silicon nanowires and silicon nanocrystals. These tiny structures behave differently from bulk silicon, enabling them to emit visible light, a property not typically associated with silicon.

I’ve explored various strategies to enhance this light emission, including nanopatterning of silicon nanowires, which we found significantly boosts their visible photoluminescence. My studies have also delved into the practical aspects of these materials, examining the temperature dependence and aging effects on silicon nanowires photoluminescence to understand their long-term stability and performance. Furthermore, I’ve demonstrated electroluminescence in ultrathin silicon nanowires, notably fabricating these structures using a novel maskless etching technique, which simplifies the manufacturing process. This comprehensive body of work highlights my contributions to understanding and controlling light emission from silicon at the nanoscale, paving the way for silicon-based light sources in future photonic devices.

These projects have been funded partly by University of Catania and performed during my M.Sc. Program and my PhD course, and by Boston University under a program supported by AFOSR – Air Force Office of Scientific Research Program.

Peer-reviewed publications

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My Research in Nanowire Growth and Manipulation

My research has extensively explored the fascinating world of silicon (Si) and germanium (Ge) nanowires, focusing on their fundamental growth mechanisms, structural control, and even their mechanical manipulation at the nanoscale. A significant portion of my work has centered on using electron beam evaporation as a precise method for growing these nanowires, allowing us to delve into the kinetics of their growth and achieve heteroepitaxial growth of Ge nanowires directly on Si substrates, including understanding their unique faceting behaviors. I’ve also focused on gaining control over the growth mechanisms and orientation of epitaxial Si nanowires, which is crucial for their integration into future technologies.

Beyond growth, my investigations have unveiled the remarkable properties of these tiny structures under external influences. My work has demonstrated and analyzed nanoscale amorphization, bending, and subsequent recrystallization in silicon nanowires, showing how they react to stress at the atomic level. Furthermore, I’ve specifically studied ion beam-induced bending of silicon nanowires, offering insights into directed manipulation techniques. We’ve also examined the subtle yet critical influence of oxygen contamination and the properties of gold (Au) catalyst clusters on the resulting structural features of Si nanowires, providing a comprehensive understanding of the factors that govern their final form. This body of research collectively contributes to a deeper understanding of nanowire science, paving the way for their application in areas like advanced electronics, sensors, and energy devices.

These projects have been funded partly by University of Catania and CSFNSM (Growth and characterization of Si and Ge nanowires), and performed during my PhD course.

Peer-reviewed publications

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Book / Book chapter

PhD in Physics

Read my blog post on my research in nanowire growth and manipulation and on my research in silicon nanostructures for light emission.

Thesis

Ph.D. in Physics, summa cum laude

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Peer-reviewed publications

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Book / Book chapter

Growth, properties and processing of group IV semiconductor nanowires
E. F. Pecora
VDM Verlag Dr. Muller (August 4, 2011), ISBN: 978-3639375763


Conferences

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View all documents

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