My research has extensively explored the fascinating world of silicon (Si) and germanium (Ge) nanowires, focusing on their fundamental growth mechanisms, structural control, and even their mechanical manipulation at the nanoscale. A significant portion of my work has centered on using electron beam evaporation as a precise method for growing these nanowires, allowing us to delve into the kinetics of their growth and achieve heteroepitaxial growth of Ge nanowires directly on Si substrates, including understanding their unique faceting behaviors. I’ve also focused on gaining control over the growth mechanisms and orientation of epitaxial Si nanowires, which is crucial for their integration into future technologies.
Beyond growth, my investigations have unveiled the remarkable properties of these tiny structures under external influences. My work has demonstrated and analyzed nanoscale amorphization, bending, and subsequent recrystallization in silicon nanowires, showing how they react to stress at the atomic level. Furthermore, I’ve specifically studied ion beam-induced bending of silicon nanowires, offering insights into directed manipulation techniques. We’ve also examined the subtle yet critical influence of oxygen contamination and the properties of gold (Au) catalyst clusters on the resulting structural features of Si nanowires, providing a comprehensive understanding of the factors that govern their final form. This body of research collectively contributes to a deeper understanding of nanowire science, paving the way for their application in areas like advanced electronics, sensors, and energy devices.
These projects have been funded partly by University of Catania and CSFNSM (Growth and characterization of Si and Ge nanowires), and performed during my PhD course.
Peer-reviewed publications
Book / Book chapter
- Growth, properties and processing of group IV semiconductor nanowires
E. F. Pecora
VDM Verlag Dr. Muller (August 4, 2011), ISBN: 978-3639375763