Sub-250nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Deep-UV optical gain has been demonstrated in Al0.7Ga0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 cm-1 has been measured and the transparency threshold of 5 microJ/cm2 was experimentally determined, corresponding to 1.4 x 1017 cm-3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

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