My research has extensively explored the intricate behavior of boron (B) atoms within both crystalline and amorphous silicon (Si), which is a critical area for semiconductor device fabrication. Understanding how boron moves and organizes itself within silicon is essential for controlling the electrical properties of integrated circuits.
My investigations have focused on unraveling the mechanisms of boron diffusion, providing experimental evidence and theoretical insights into how boron spreads through these silicon structures. A significant part of my work has involved studying boron clustering in amorphous silicon, revealing how boron atoms can group together, which directly impacts their electrical activation and overall device performance. We’ve specifically looked into the concept of indirect diffusion of boron atoms in both crystalline and amorphous silicon, shedding light on the complex pathways these atoms take. This comprehensive research has clarified the fundamental processes governing boron behavior, offering crucial knowledge for optimizing doping profiles and improving the performance and reliability of silicon-based electronic devices.
These projects have been funded partly by Scuola Superiore di Catania.