Mechanism of boron diffusion in amorphous silicon

We have elucidated the mechanism for B migration in the amorphous (a-) Si network. B diffusivity in a-Si is much higher than in crystalline Si; it is transient and increases with B concentration up to 2 x 1020 B/cm3. At higher density, B atoms in a-Si quickly precipitate. B diffusion is indirect, mediated by dangling bonds (DB) present in a-Si. The density of DB is enhanced by B accommodation in the a-Si network and decreases because of a-Si relaxation. Accurate data simulations allow one to extract the DB diffusivity, whose activation energy is 2.6 eV. Implications of these results are discussed.

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Centro Siciliano di Fisica Nucleare e Struttura della Materia

PostDoc Fellow at MATIS Labs. granted by Centro Siciliano di Fisica Nucelare e Struttura della Materia on Growth and Characterization of Si and Ge Nanowires from 2009, November through 2010, December.

Research projects

  • Growth and characterization of Si and Ge nanowires, funded by Centro Siciliano di Fisica Nucleare e Struttura della Materia (2009, November – 2010, December)

Publication output

Book / Book chapter

Scuola Superiore di Catania

Diploma, summa cum laude at Scuola Superiore di Catania – University of Catania
Thesis: Boron diffusion and clustering in amorphous silicon
Advisors: prof. Francesco Priolo, dr. Salvatore Mirabella
Date: 2007, September 26

Publication output

Conference proceeding